Computer Engineering and Applications ›› 2014, Vol. 50 ›› Issue (19): 42-46.

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Design of multi-band CMOS switching power amplifier with power control

YAN Yonghong1, CHEN Hao1,2, FAN Xiaohua2, LIU Yu2, ZENG Yun1   

  1. 1.College of Physics and Microelectronics Science, Hunan University, Changsha 410082, China
    2.Department of Radio Frequency Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • Online:2014-10-01 Published:2014-09-29


颜永红1,谌  昊1,2,樊晓华2,刘  昱2,曾  云1   

  1. 1.湖南大学 物理与微电子科学学院,长沙 410082
    2.中国科学院 微电子研究所 射频集成电路研究室,北京 100029

Abstract: Switching power amplifier has higher efficiency than the traditional linear power amplifier. Class-E power amplifier is widely used because of its relatively higher efficiency and easier implementation, but it cannot achieve adequate output power and efficiency at low frequency. Class-E type matching is utilized at higher band(433 MHz) while the amplifier is matched in a novel square wave way at lower(315 MHz, 230 MHz) band. The simulation and layout are based on Cadence software, the designed amplifier can achieve 20 dBm output power with 40% drain efficiency over the entire bands using the same on-chip circuits. At the same time, the output power can be digitally controlled by changing the width of the output transistor.

Key words: multi-band, power control, CMOS, switched, power amplifier

摘要: 开关类功率放大器相对于传统的线性功率放大器有更高的效率,其中E类开关功率放大器由于其高效、易于实现等特点被广泛运用,但在低频率时E类功率放大器难以达到足够的输出功率和效率。设计实现的多频段开关功率放大器在高频段(433 MHz)采用E类匹配方式,在较低的频段(315 MHz、230 MHz)采用新颖的方波匹配。在Cadence软件平台下进行仿真及版图绘制,结果显示该多频段开关功率放大器各频段都实现了20 dBm的输出功率,漏极效率均达到40%,同时,通过控制晶体管尺寸,可以对输出功率进行数字控制。

关键词: 多频段, 功率可控, 金属氧化为半导体, 开关类, 功率放大器