计算机工程与应用 ›› 2011, Vol. 47 ›› Issue (5): 246-248.

• 工程与应用 • 上一篇    

集成电路刻蚀过程三维仿真模型优化

吴永亮,万旺根,徐鸿玮   

  1. 上海大学 通信与信息工程学院,上海 200072
  • 收稿日期:1900-01-01 修回日期:1900-01-01 出版日期:2011-02-11 发布日期:2011-02-11

Research for 3D simulation model optimization of ICs etching process

WU Yongliang,WAN Wanggen,XU Hongwei   

  1. School of Communication and Information Engineering,Shanghai University,Shanghai 200072,China
  • Received:1900-01-01 Revised:1900-01-01 Online:2011-02-11 Published:2011-02-11

摘要: 集成电路三维刻蚀仿真模型的原始方案使用的是可变点阵的三维刻蚀仿真模型。但是在这种模型作用下新的刻蚀点空间坐标的误差会随着刻蚀点间距的不断增大而增大,最终的积累误差会导致仿真的效果变差。改进了原有算法,使用了新的固定点阵的离散化数学模型代替原有可变点阵的模型,大幅改善了刻蚀精度和显示效果。并给出了刻蚀仿真的结果并进行了讨论。

关键词: 刻蚀, 仿真, 固定点阵

Abstract: The initial schema of IC 3D etching simulation model uses the 3D etching simulation model with variable grid.But the problem is that the error of the new etching space points coordinates will increase when the distances between etching points increase using the above-mentioned model.This paper improves the initial algorithm,using a new discrete math model with fixed grid instead,which dramatically improves the etching precision and display effect.The simulation results with the new model are presented and discussed.

Key words: etching, simulation, fixed grid