计算机工程与应用 ›› 2009, Vol. 45 ›› Issue (8): 84-86.DOI: 10.3778/j.issn.1002-8331.2009.08.025

• 研发、设计、测试 • 上一篇    下一篇

提高Nand Flash性能的方法

邱 华,黄少珉,张 萌   

  1. 东南大学 国家专用集成电路系统工程技术研究中心,南京 210096
  • 收稿日期:2008-02-28 修回日期:2008-05-06 出版日期:2009-03-11 发布日期:2009-03-11
  • 通讯作者: 邱 华

Method used for improving Nand Flash performances

QIU Hua,HUANG Shao-min,ZHANG Meng   

  1. National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,China
  • Received:2008-02-28 Revised:2008-05-06 Online:2009-03-11 Published:2009-03-11
  • Contact: QIU Hua

摘要: 在嵌入式系统中,Nand Flash因具有写入速度快、密度大的特点,因此特别适合用作大容量数据存储。但是在系统处理一些大量的视频数据和其他高分辨率数据存储的时候,Nand Flash的擦除和写性能难以满足要求。分析并实现了一种利用多片编程来提高Nand Flash擦、写性能的方案。实验中采用4片编程技术,结果表明,该方案可以将Nand Flash的写速率提高75.60%,擦除速率提高74.95%。

关键词: Nand闪存, 多片编程, 擦除和写性能

Abstract: Nand Flash is suitable for mass data storage because of its high writing rate and high density in embedded systems.But Nand Flash performances of erasing and writing can’t satisfy the needs of the system when the embedded system is handling large quantity of video data and other data with high resolution.This paper analyzed and implemented a method of how to improve erasing and writing performances of Nand Flash using multi-plane operation.Authors implemented four-plane operation in the experiment which on real platform could improve the writing rate by 75.60% and erasing rate by 74.95%.

Key words: Nand Flash, multi-plane page program, erasing and writing performances