关键词: 相变存储器, 擦写不对称性, 磨损均衡, 写入延时

Abstract:

Phase Change Memory（PCM） has excellent characteristics such as high integration, low power consumption, non-volatile, etc. It is one of the most potential storage media as non-volatile memory. But, how to reduce its write delay and increase its service life is an urgent problem to be solved when PCM is used as a non-volatile memory. Thus this study proposes an independent writing method, RSIW（Reset and Set Independently Write）. This method changes the strategy that reset and set are performed simultaneously in one writing cycle in the writing scheme of the prior art scheme, so that the writing speed of the phase change memory is significantly improved. At the same time, RSIW can also combine the wear-leveling strategy to effectively balance the write frequency of each block. The writing method and implementation details of independent writing and erasing are described in the article, and the similar schemes of using phase-change memory to erase and write asymmetry are compared. Finally, the gem5 simulator is used to test. According to the experimental results, the method compares similar methods. The technology can improve the operating efficiency of the system by 37.1%~69.1%.

Key words: phase change memory, asymmetry of set and reset, wear leveling, write latency